Question
Asked 2nd Jul, 2020

Is there any example of using Sentaurus Device to calculate the inverse piezoelectric effect?

I am interested in including the inverse piezoelectric effect into my GaN HEMT simulation. Sentaurus Device provides a special feature that allows me to update the stress field by invoking the mechanic solver (Sentaurus Interconnect). But I don't have confidence in the results I got. Because from the mathematical point of view, solving the inverse piezoelectric effect is just a simple matrix multiplication (AB = C). However, the final matrix C I got was very weird - some components in C matrix should be zero but they are not. So I was wondering if there is anyone has the same situation about this?

Popular Answers (1)

14th Jul, 2020
Abdelhalim Zekry
Ain Shams University
Dear Han-Wei,
welcome,
You want to validate your results.
you can make this validation by solving a known simple example where it can be solved analytically or its numerical solution is known with high confidence.
You can simplify the geometry of the device such that it can be solved analytically.
Than you can compare your numerical solution with the analytical solution.
You must not solve specifically for the HEMT.
Best wishes
4 Recommendations

All Answers (3)

2nd Jul, 2020
Ijaz Durrani
DR Han: In COMSOL, mechanical strain due to thermal expansion is a one-way couple. ... in semiconductors use a combination of commercial software or write their own code. Venkatachalam et al. used a combination of Sentaurus for the electrical ... Strain due to the inverse piezoelectric effect in the HEMT example is modeled by?...
Examples, Working, Inverse Piezoelectricity Effect, Using the Piezoelectricity Effect, ... In the above figure, there will be a voltage potential across the material. ... Non-audio reverse piezoelectric devices comprise actuators as well as motors.
Regards-
12th Jul, 2020
Dr Azeez Barzinjy
Salahaddin University - Erbil
Jones, Jason P., Matthew R. Rosenberger, William P. King, Rama Vetury, Eric Heller, Donald Dorsey, and Samuel Graham. "Electro-thermo-mechanical transient modeling of stress development in AlGaN/GaN high electron mobility transistors (HEMTs)." In Fourteenth Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), pp. 959-965. IEEE, 2014.
14th Jul, 2020
Abdelhalim Zekry
Ain Shams University
Dear Han-Wei,
welcome,
You want to validate your results.
you can make this validation by solving a known simple example where it can be solved analytically or its numerical solution is known with high confidence.
You can simplify the geometry of the device such that it can be solved analytically.
Than you can compare your numerical solution with the analytical solution.
You must not solve specifically for the HEMT.
Best wishes
4 Recommendations
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